Abstract
Wide band-gap semiconductors, like silicon carbide, are an obvious choice for use in high-power electronics that operate under high temperatures. By using materials that can handle these extreme temperatures, the need for temperature management additions, such as bulky fans and liquid cooling systems, is eliminated. However, one major impediment to capitalizing on all the benefits of these conductors is the lack of reliable high-temperature device packaging. While there has been some progress in electronics packaging in the last two decades, all the available approaches have significant limitations. Metal and ceramic packaging can accommodate temperatures of up to 400 degrees Celsius, however, they are only suitable for low current applications. Plastic packaging offers a low-cost alternative with high manufacturability and compact package size, however, is unsuitable for temperatures above 150 degrees Celsius.
Technical Details
UCF researchers have developed a novel electronics packaging design that addresses the primary shortcomings of existing products, while leveraging recent advancements in material science. The packaging uses a hybrid design that includes double metal lead frames around the semiconductor and injection-molded high temperature polymer materials to encapsulate it. They have created a packaging that is reliable, has high current-carrying potential and achieves higher overall performance.
Benefit
Low manufacturing cost High current carrying capability with low parasitic impedance Low thermo-mechanical stress and low package thermal resistance No need for additional cooling subsystems 5x reduction in size and 10x reduction in weight from the prior art Easy system integration Increased product qualityMarket Application
Semiconductors Electronics Silicon-based semiconductor devices
Brochure