An ambipolar field-effect transistors (FETs) of multi-layered triclinic ReSe2, mechanically exfoliated onto a Si02 layer grown on p-doped Si. These FETs show ambipolar response with near zero threshold voltage. Used to fabricate a simple, gate-voltage-controlled continuously tunable phase modulator with the ability to shift the phase of the input signal from zero to nearly 180 degrees. The nanoscale architecture permits high-density fabrication for miniaturized circuits and operates in the kilohertz to megahertz frequency range.
