With modern advancements in the integrated circuit industry, Chemical Mechanilcal Planarization (CMP) has been widely adopted for high-precision fabrication processes. CMP creates a nearly-perfect flat surface on a silicon wafer by using mechanical polishing and a chemical slurry to remove unwanted conductive and dielectric materials.
Two chief problems commonly faced by users of CMP are the tendency of the nanoparticles within the chemical slurry to agglomerate and the adherence of these particles to the surface of the wafer. Dr. Schlenoff has developed a silica nanoparticle with a modified surface that is well suited for these challenges. Importantly, these abrasive nanoparticles form stable suspensions. They resist aggregation or agglomeration without the need for surfactant additives and the additional steps required to remove the resulting residue. Additionally, they demonstrate minimal adhesion to the wafer surface.
