A gate driver for power semiconductors including metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs) that does not require isolated power supplies. The use of a circuit to transfer signal and power at the same time by a radio frequency (RF) transformer which works at several hundreds of a Megahertz and provides galvanic isolation. The frequency band is designed to be much larger than conducted electromagnetic interference (EM) frequency ranges, which are less than 30 Megahertz. The driver is free of standby power loss and has a built-in active gating function.
