Abstract
The University of Central Florida invention is a planar
transmission line structure that can be engineered to not only reduce
interconnect losses but also serve as a radio-frequency (RF) delay line for
chip, board, and long-haul interconnects. RF transmission lines provide the
interconnection of all chip-level communications between transistor structures,
as well as the board-level traces connecting memory, processing, and I-O
commands. In the last several decades, these lines' applications have expanded
to act as traveling wave electrodes for many photonic devices, enabling the
flow of internet traffic for server-level interconnects as well as long-haul
communications over fiber.
With the introduction of wideband delay lines, chip-level
routing constraints may be relaxed to avoid race conditions between gates
during layout. Additionally, when coupled with optical Bragg grating
structures, the optical propagation tunability improves device performance in
RF photonic device designs, thanks to enhanced velocity matching between the
optical and radio-frequency wave propagation coefficients. Improving velocity
matching is incumbent on the optical grating structure and is done
independently from any changes to RF propagation caused by adding the electrode
microstructures.
Technical
Details: The UCF invention offers improved systems and methods
for greater engineering flexibility across a variety of platforms such as radio-frequency
integrated circuits (RFICs) and photonic integrated circuits (PICs). Enabling
the addition of specialized microstructures, the technology can be added to a
traditional coplanar microwave transmission line to enhance the inductive and
capacitive properties of the line. Thus, it provides better distribution and control
of radio-frequency signals on chip-level structures. Applications include radio
frequency (RF) photonics, RF delay lines, analog/digital signal processing, and
optical interconnects.
In one example, a system can
include an electrode with a main portion extending along a longitudinal axis. Multiple
T-shaped sub-electrodes extend laterally from the main portion. Likewise,
multiple inductive sub-electrodes extend laterally from the main portion. The
inductive sub-electrodes interdigitate with the T-shaped sub-electrodes to form
an alternating pattern with the T-shaped sub-electrodes in a lengthwise
direction along the longitudinal axis. Additionally, a second electrode with a
second main portion can extend parallel to the longitudinal axis, with a gap
between the second electrode and the T-shaped sub-electrodes.
Benefit
Compatible with a single metallization lift-off step to improve device throughputImproves performance over standard bus-design coplanar waveguidesReduces energy per bit consumption for server-to-server communication as well as for long-haul transmission between data centersMarket Application
Data centersIntegration with a variety of platforms including thin film lithium niobate (TFLN) on insulator or TFLN on siliconPlasmonic devices
Brochure