Kevin Jones

167. J.R. Smith, A. Chen, D. Gostovic, D. Hickey, D. Kundinger, K.L. Duncan, R.T. DeHoff, K.S. Jones and E.D. Wachsman, “Evaluation of the Relationship Between Cathode Microstructure and Electrochemical Behavior for SOFCs,”, Solid State Ionics, 180 (2009) pg. 90-98. 168. N. G. Rudawski, K. S. Jones, and R. Gwilliam, “Stressed Solid-Phase Epitaxial Growth of (011) Si,” J. Mater. Res. 24, 305 (2009). 169. N. G. Rudawski, K. S. Jones, S. Morarka, M. E. Law, and R. G. Elliman, “Stressed Multi-Directional Solid-Phase Epitaxial Growth of Si,” (Invited Paper) J. Appl. Phys., 98, 041301, (2009). 170. S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, and R. G. Elliman, “Modeling Two-Dimensional Solid-Phase Epitaxial Regrowth using Level Set Methods,” J. Appl. Phys., 105, 053701, (2009). 171. L. Romano, N. G. Rudawski, M. R. Holzworth, K. S. Jones, S. Choi, and S. T. Picraux, “Manipulation and Deformation of Ge Nanowires by Ion-Irradiation,” J. Appl. Phys. 106, 114316, 2009. 172. L. Romano, K. S. Jones, K. Sekar, and W.A. Krull, “Amorphization of Si using cluster ions”, Journal of Vacuum Science & Technology B, 27 (2), 598, (2009). 173. D.P. Hickey, K.S. Jones, R.G. Elliman, “Amorphization and graphitization of single-crystal diamond — A transmission electron microscopy study”, Diamond & Related Materials, 18, 1353–1359 (2009). 174. S. Morarka, N.G. Rudawski, M.E. law, K.S. Jones and R.G. Elliman, “Effect of Dopants on Patterned Amorphous Regrowth”, J. Vac. Sci. Technol. B, 28, C1F1, (2010). 175. C.Y. Chang, T. Anderson, J. Hite, D. J. Cheney, E. A. Douglas, B. P. Gila, F. Ren, G. D. Via, P. Whiting, R. Holzworth, K. S. Jones, S. Jang, S. J. Pearton, “Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors”, J. Vac. Sci. Technol. B 28(5), 1044, (2010). 176. B.L. Darby, B.R. Yates, N.G. Rudawski, K.S. Jones, A. Kontos, “Self-implantation energy and dose effects on Ge solid-phase epitaxial growth“ Nucl. Instrum. Methods Phys. Res. B 269 (2011) 20.1044 (2010). 177. E. A. Douglas, C. Y. Chang, D. J. Cheney, B. P. Gila, C. F. Lo, L.Lu, R. Holzworth, P.Whiting, K. Jones, G. D. Via, J. Kim, S. Jang, F. Ren, S. J. Pearton, “AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress”, Microelectron. Reliab. 51, 207 (2011).